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EPROM Datasheet, 16K EPROM Datasheet, buy MF1 NMOS uv EPROM: 8kx8. x 8 ORGANIZATION mW Max ACTIVE POWER, mW Max Details, datasheet, quote on part number: MF1. The NTE is a 16,–bit ( x 8–bit) Erasable and Electrically . After erasure and reprogramming of the EPROM, it is recommended that the quartz.

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Search the history of over billion web pages on the Internet. Full text of ” IC Datasheet: The MME is packaged in a pin dafasheet package with transparent lid.

IC Datasheet: EPROM – 1 : Free Download, Borrow, and Streaming : Internet Archive

The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written into the device by following the programming procedure. Except for “Operating Temperature Range” they are not meant to imply that the devices should be operated at these limits.

The datahseet of “Electrical Characteristics” provides conditions for actual device operation.

Typical conditions are for operation at: Capacitance Is guaranteed by periodic testing. To prevent damage the device it must not be inserted into a board with power applied. Transition times S 20 ns unless noted otherwise. These are shown in Table I. All bits will be at a “1” level output high in this initial state and after any full erasure. Table II shows the 3 programming modes. This is done 8 bits a byte at a time. Any individual address, a sequence of addresses, or addresses chosen at random may be programmed.


Any or all of the 8 bits associated with an address location may be programmed wFth a single program pulse applied to the chip enable pin. All input voltage levels, including the program pulse on chip-enable are TTL compatible. The programming sequence is: After the address and data signals are stable the program pin is pulsed from VI L to VIH with a pulse width between 45 ms and 55 ms.

Multiple pulses are not needed but will not cause device damage.

No pins should be left open. MMES may be programmed in parallel with the same data in this mode.

Program Verify Mode The programming of the MME may be verified either 1 word at a time during the programming as shown in the timing diagram or by reading all of the words out at the end of the programming sequence.

Program Inhibit Mode The datawheet inhibit mode allows programming several MMES simultaneously with different data for each one by controlling which ones receive the program pulse. All similar inputs of the MME may be par- alleled. This exposure discharges the floating gate to its initial state through induced photo current.

It is recommended that the MME be kept out of direct sunlight. The UV content of sunlight may cause a partial erasure of some bits in a relatively short period datasyeet time. Direct sunlight any intense light can cause temporary functional fail- ure due to generation of photo current. Extended expo- sure to room level fluorescent lighting will also cause erasure.


An opaque coating paint, tape, label, etc. The MME to be erased should be placed 1 inch away from the lamp and no filters should be used. An erasure system should be calibrated periodically. The distance from lamp to unit should be maintained at 1 inch.

The erasure time is increased by the square of the distance if the distance is doubled the erasure time goes up by a factor of 4.

2716 – 2716 16K EPROM Datasheet

Lamps lose intensity as they age. When a lamp is changed, the distance is changed, or the lamp is aged, the system should be checked to make certain full erasure is occurring.

In- complete erasure will cause symptoms that can be misleading. Programmers, components, and system designs have been erroneously suspected when incom- plete erasure was the basic problem.